Previously, the fastest Universal Flash Storage (UFS) you could get on a device was Samsung UFS 4.0, which offers up to 4,200MBps read and up to 2,800MBps write speeds. But the Korean company have been dethroned by an American company.
Micron has recently made an announcement about its UFS 4.0 mobile storage solution, and the storage solution will be utilised for producing storage capacities of 256GB, 512GB, and 1TB. Mass production is scheduled to commence in the second half of this year, implying that it will take some time before smartphones incorporating Micron UFS 4.0 storage become available.
The storage is constructed using 232-layer TLC flash, which refers to triple-level cells capable of storing 3 bits per cell. Micron claims that its six-plane NAND architecture facilitates superior random read performance. When compared to the previous generation of storage, the write bandwidth has increased by 100%, while the read bandwidth has increased by 75%.
Micron said their UFS 4.0 storage technology offers sequential read speeds of up to 4,300Mbps and sequential write speeds of up to 4,000Mbps.
Furthermore, Micron claims the new UFS 4.0 chips demonstrate a 25% improvement in power efficiency, 15% faster app launches, 20% faster bootup speed, and a 10% reduction in write latency compared to previous versions.
Micron said it has already sent qualification samples to specific global smartphone manufacturers and chipset vendors, so we might only see devices that come with UFS 4.0 on the market next year.
